Reaction mechanisms at 4H-SiC/SiO<sub>2</sub> interface during wet SiC oxidation

T. Akiyama

doi:https://doi.org/10.7567/SSDM.2017.PS-14-02

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation

^○T. Akiyama¹, S. Hori¹, K. Nakamura¹, T. Ito¹, H. Kageshima², M. Uematsu³, K. Shiraishi⁴ (1.Mie Univ. (Japan), 2.Shimane Univ. (Japan), 3.Keio Univ. (Japan), 4.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-14-02

2017 International Conference on Solid State Devices and Materials

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation