Normally-off MOSFET Properties Fabricated on Mg Implanted GaN Layers

2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

^○S. Takashima¹, K. Ueno¹, R. Tanaka¹, H. Matsuyama¹, M. Edo¹, K. Nakagawa² (1.Fuji Electric Co., Ltd. (Japan), 2.Univ. of Yamanashi (Japan))