The Japan Society of Applied Physics

[PS-14-11 (Late News)] A first principles study on the C=C defects near SiC/SiO2 interface: Defect passivation by double bond saturation

N. Tajima1, T. Kaneko1, T. Yamasaki1, J. Nara1, T. Schimizu2, K. Kato3, T. Ohno1 (1.NIMS (Japan), 2.Toshiba Corp. (Japan), 3.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.PS-14-11