A first principles study on the C=C defects near SiC/SiO<sub>2</sub> interface: Defect passivation by double bond saturation

N. Tajima

doi:https://doi.org/10.7567/SSDM.2017.PS-14-11

[PS-14-11 (Late News)] A first principles study on the C=C defects near SiC/SiO₂ interface: Defect passivation by double bond saturation

^○N. Tajima¹, T. Kaneko¹, T. Yamasaki¹, J. Nara¹, T. Schimizu², K. Kato³, T. Ohno¹ (1.NIMS (Japan), 2.Toshiba Corp. (Japan), 3.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.PS-14-11

2017 International Conference on Solid State Devices and Materials

[PS-14-11 (Late News)] A first principles study on the C=C defects near SiC/SiO2 interface: Defect passivation by double bond saturation

[PS-14-11 (Late News)] A first principles study on the C=C defects near SiC/SiO₂ interface: Defect passivation by double bond saturation