[PS-3-01] Ge-on-insulator tunneling FET with abrupt source junction by snowplow effect of NiGe

^○R. Matsumura^1,2, T. Katoh¹, R. Takaguchi¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan), 2.JSPS Res. Fellow (Japan))

https://doi.org/10.7567/SSDM.2017.PS-3-01