Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF<sub>2</sub> ion implantation

2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

T. Katoh¹,^○R. Matsumura¹, R. Takaguchi¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))