[PS-3-13 (Late News)] Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS

^○K. Takahashi¹, K. Komatsu¹, T. Sakamoto¹, K. Kimura¹, F. Matsuoka¹ (1.Toshiba Electronic Devices & Storage Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-3-13