Low-Temperature Microwave Annealing Process for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs

J. W. Lin

doi:https://doi.org/10.7567/SSDM.2017.PS-3-16

[PS-3-16 (Late News)] Low-Temperature Microwave Annealing Process for In_0.53Ga_0.47As MOSFETs

^○J. W. Lin¹, Q. -H. Luc¹, K. S. Yang¹, C. -C. Chang¹, C. -C. Fan Chiang¹, H. B. Do¹, H. M. T. Ha¹, S. H. Huynh¹, Y. D. Jin¹, T. A. Nguyen¹, Y. -C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-3-16

2017 International Conference on Solid State Devices and Materials

[PS-3-16 (Late News)] Low-Temperature Microwave Annealing Process for In0.53Ga0.47As MOSFETs

[PS-3-16 (Late News)] Low-Temperature Microwave Annealing Process for In_0.53Ga_0.47As MOSFETs