[PS-4-11] V_th variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell

^○H. Oh¹, J. Kim¹, R. -H. Baek¹, J. -S. Lee¹ (1.POSTECH (Korea))

https://doi.org/10.7567/SSDM.2017.PS-4-11