Poly-Ge Tri-gate Nanowire Junctionless Charge-Trapping Flash Devices Formed with Low-Temperature Processes for 3D Memory Applications

Y. -C. Lu

doi:https://doi.org/10.7567/SSDM.2017.PS-4-12

[PS-4-12] Poly-Ge Tri-gate Nanowire Junctionless Charge-Trapping Flash Devices Formed with Low-Temperature Processes for 3D Memory Applications

^○Y. -C. Lu¹, K. -S. Chang-Liao¹, H. -K. Fang¹, K. -Y. Li¹, W. -H. Huang², C. -H. Shen², J. -M. Shieh² (1.National Tsing Hua Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-4-12

2017 International Conference on Solid State Devices and Materials

[PS-4-12] Poly-Ge Tri-gate Nanowire Junctionless Charge-Trapping Flash Devices Formed with Low-Temperature Processes for 3D Memory Applications