The Japan Society of Applied Physics

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO2/AlN/InGaAs MOS Devices

H. Binh Do1, Q. H. Luc1, M. T. H. Ha1, S. H. Huynh1, T. A. Nguyen1, J. W. Lin1, K. S. Yang1,C. -C. F. Chiang1, Y. -D. Jin1, Y. C. Lin1, E. Y. Chang1 (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-6-05