Investigation of the Interface Stability of the Metal/HfO<sub>2</sub>/AlN/InGaAs MOS Devices

H. Binh Do

doi:https://doi.org/10.7567/SSDM.2017.PS-6-05

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO₂/AlN/InGaAs MOS Devices

H. Binh Do¹, Q. H. Luc¹, M. T. H. Ha¹, S. H. Huynh¹, T. A. Nguyen¹, J. W. Lin¹, K. S. Yang¹,^○C. -C. F. Chiang¹, Y. -D. Jin¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-6-05

2017 International Conference on Solid State Devices and Materials

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO2/AlN/InGaAs MOS Devices

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO₂/AlN/InGaAs MOS Devices