Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy

K. Shiojima

doi:https://doi.org/10.7567/SSDM.2017.PS-6-13

[PS-6-13] Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, H. Konishi¹, H. Imadate¹, Y. Yamaoka^2,3, K. Matsumoto², T. Egawa³ (1.Univ. of Fukui (Japan), 2.Taiyo Nippon Sanso Corp. (Japan), 3.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-6-13

2017 International Conference on Solid State Devices and Materials

[PS-6-13] Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy