Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE

T. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2017.PS-8-07

2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

[PS-8-07] Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE

^○T. Yamaguchi¹, T. Sasaki², M. Takahasi², T. Araki³, T. Onuma¹, T. Honda¹, Y. Nanishi³ (1.Kogakuin Univ. (Japan), 2.QST (Japan), 3.Ritsumeikan Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-8-07

▲