Device Performance and Characteristics of Nano Scale n-type Junctionless FET (nJLFET) with Raised Source and Drain Structure

C. -L. Lin

doi:https://doi.org/10.7567/SSDM.2017.PS-9-07

[PS-9-07] Device Performance and Characteristics of Nano Scale n-type Junctionless FET (nJLFET) with Raised Source and Drain Structure

C. -L. Lin¹, Y. -J. Lu¹, J. -D. Lee¹,^○W. -T. Hong¹, K. -P. Chen¹, S. -H. Ong¹, W. -C. Chen¹, J. -S. Wu¹, Y. -S. Jhu¹, P. -C. Juan², T. -K. Kang¹, P. -C. Yang¹ (1.Feng Chia Univ. (Taiwan), 2.Mingchi Univ. of Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-9-07

2017 International Conference on Solid State Devices and Materials

[PS-9-07] Device Performance and Characteristics of Nano Scale n-type Junctionless FET (nJLFET) with Raised Source and Drain Structure