High-hole mobility GeSn on glass formed by solid-phase crystallization using an atomic density controlled precursor

2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

11:45 AM - 11:47 AM

^○K. Moto^1,2, K. Toko¹, R. Yoshimine¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan))