Reaction mechanisms at 4H-SiC/SiO<sub>2</sub> interface during wet SiC oxidation

T. Akiyama

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜 2017年9月22日
Sendai International Center

11:37 〜 11:39

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation

^○T. Akiyama¹, S. Hori¹, K. Nakamura¹, T. Ito¹, H. Kageshima², M. Uematsu³, K. Shiraishi⁴ (1.Mie Univ. (Japan), 2.Shimane Univ. (Japan), 3.Keio Univ. (Japan), 4.Nagoya Univ. (Japan))

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2017 International Conference on Solid State Devices and Materials

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation