Compact Modeling of SiC Schottky Barrier Diode (SBD) and Its Extension to Junction Barrier Schottky Diode (JBS)

D. Navarro

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜 2017年9月22日
Sendai International Center

11:39 〜 11:41

[PS-14-03] Compact Modeling of SiC Schottky Barrier Diode (SBD) and Its Extension to Junction Barrier Schottky Diode (JBS)

^○D. Navarro¹, M. Miura-Mattausch¹, H. J. Mattausch¹, M. Takusagawa², J. Kobayashi², M. Hara² (1.Hiroshima Univ. (Japan), 2.Toyota Motor Corp. (Japan))

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