11:37 〜 11:39

[PS-3-02] Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF₂ ion implantation

T. Katoh¹,^○R. Matsumura¹, R. Takaguchi¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))