11:55 〜 11:57

[PS-3-11] Theoretical Investigation of the Performance Improvement in GeSn/SiGeSn hetero Line Tunneling FET (HL-TFET)

^○H. Wang¹, G. Han¹, Y. Liu¹, C. Zhang¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))