11:37 AM - 11:39 AM

[PS-6-02] RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO₂ as Gate Insulator

Y. -S. Chiu¹,^○Y. Lin¹, Y. C. Lin¹, J. C. Huang¹, H. Iwai², K. Kakushima², E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan), 2.Tokyo Tech (Japan))