11:41 〜 11:43
[PS-6-04] Electrical Characteristics of n-GaN Schottky Contacts on Cleaved Surfaces of Free-Standing Substrates -- Metal Work-Function Dependence of Schottky Barrier Height --
○H. Imadate1, T. Mishima2, K. Shiojima1
(1.Univ. of Fukui (Japan), 2.Hosei Univ. (Japan))
