2017 International Conference on Solid State Devices and Materials
Sep 19, 2017 - Sep 22, 2017 Sendai International Center
11:41 AM - 11:43 AM
[PS-6-04] Electrical Characteristics of n-GaN Schottky Contacts on Cleaved Surfaces of Free-Standing Substrates -- Metal Work-Function Dependence of Schottky Barrier Height --
○H. Imadate1, T. Mishima2, K. Shiojima1 (1.Univ. of Fukui (Japan), 2.Hosei Univ. (Japan))
