11:45 〜 11:47

[PS-6-06] AlGaN/GaN Schottky Gate Fin-HEMT Fabricated on 8-inch Silicon (111) Substrate with Thin Buffer Layer

^○L. -C. Chang¹, C. -J. Dai¹, M. Yang¹, Y. -H. Jiang¹, C. -H. Wu¹ (1.National Taiwan Univ. (Taiwan))