The Japan Society of Applied Physics

11:49 AM - 11:51 AM

[PS-6-08] Improved Electrical Stability of Thin-Film Transistors with Co-sputtered Ti-IGZO Channel and Zr0.85Si0.15O2 Gate Dielectric

H. -P. Yan1, Z. -K. Zhuang1 (1.National Cheng Kung Univ. (Taiwan))