11:55 AM - 11:57 AM [PS-6-11] Electrical Performances of 1T-DRAM based on PNPN Tunneling FET with asymmetric Double-Gate Structure ○Y. J. Yoon1, J. H. Seo1, M. S. Cho1, B. G. Kim1, I. M. Kang1 (1.Kyungpook National Univ. (Korea))
