11:57 〜 11:59 [PS-6-12] Transient-mode Simulation of MOS C-V Characteristics for GaN ○K. Fukuda1, H. Asai1, J. Hattori1, M. Shimizu1, T. Hashizume2 (1.AIST (Japan), 2.Hokkaido Univ. (Japan))
