The Japan Society of Applied Physics

11:39 AM - 11:41 AM

[PS-8-03] Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator

H. Gao1, R. Aoki1, M. Miyao1, T. Sadoh1 (1.Kyushu Univ. (Japan))