The Japan Society of Applied Physics

11:59 AM - 12:01 PM

[PS-9-06] A Vertical Ge Tunneling FET With Tapered Source/Drain Strctures

K. Wu1,G. -L. Luo1, C. -L. Chu1, S. -H. Chen1, B. -Y. Chen1, W. -F. Wu1, W. -K. Yeh1,2, C. -H. Chien3 (1.National Nano Device Labs. (Taiwan), 2.National Univ. of Kaohsiung (Taiwan), 3.National Chiao Tung Univ. (Taiwan))