Fabrication and characterization of p-type heavily doped silicon quantum dots

2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

12:05 PM - 12:07 PM

^○S. Mizoguchi¹, N. Shimatani¹, T. Makino¹, Y. Yamaoka¹, T. Kodera¹ (1.Tokyo Tech (Japan))