2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (261 - 270)

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[K-2-05 (Late News)] Wide-range bioelectrical impedance analysis circuit with GIDL-controlled ultrasmall current and ultralow frequency square wave generator

^○Y. Takezawa¹, K. Shimokawa¹, Z. Qian¹, H. Kino¹, T. Fukushima¹, K. Kiyoyama², T. Tanaka¹ (1.Tohoku Univ. (Japan), 2.Nagasaki Inst. of Applied Sci. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 5:00 PM - 5:15 PM |PDF Download

[K-3-01] A new kinetic model for thermal oxidation of Ge

^○X. Wang¹, T. Nishimura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 9:30 AM - 9:50 AM |PDF Download

[K-3-02] Ge Oxidation does not follow the Deal-Grove Mechanism

H. Li¹,^○J. Robertson¹ (1.Cambridge Univ. (UK))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 9:50 AM - 10:10 AM |PDF Download

[K-3-03] Impact of reaction kinetics at GeO₂/Si for high-performance SiGe gate stacks

^○W. Song¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:10 AM - 10:30 AM |PDF Download

[K-3-04] Role of Y-doping into GeO₂ in Ge gate stack reliability

^○X. Tang^1,2, A. Toriumi¹ (1.Univ. of Tokyo (Japan), 2.Nanjing Univ. (China))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:30 AM - 10:50 AM |PDF Download

[K-3-05] Ge and O Valence States in GeO_x Interfacial Layer on Hole Mobility of Low EOT Ge pMOSFET

^○J. -S. Li¹, S. -H. Yi¹, W. -Y. Hsu¹, J. Huang¹, C. -W. Hsu¹, T. -Y. Wu¹, D. -B. Ruan¹, K. -S. Chang-Liao¹ (1.National Tsing Hua Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:50 AM - 11:10 AM |PDF Download

[K-3-06 (Late News)] Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs

^○T. Sakaguchi¹, K. Akiyama¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:10 AM - 11:25 AM |PDF Download

[K-4-01 (Invited)] Ion implantation technology for advanced ULSI devices

^○T. Kuroi¹ (1.Nissin Ion Equipment Co., Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:00 PM - 2:30 PM |PDF Download

[K-4-02] CMOS Integration of Thermally Stable Diffusion and Gate Replacement (D&GR) High-k/Metal Gate Stacks in DRAM Periphery Transistors

^○E. Dentoni Litta¹, R. Ritzenthaler¹, T. Schram¹, A. Spessot¹, B. O'Sullivan¹, Y. Ji², G. Mannaert¹, C. Lorant¹, F. Sebaai¹, A. Thiam¹, M. Ercken¹, S. Demuynck¹, N. Horiguchi¹ (1.IMEC (Belgium), 2.SK Hynix (Korea))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:30 PM - 2:50 PM |PDF Download

[K-4-03] S/D Contact Solutions to Enable Contact Resistivity <1E-9 for 5nm and Beyond

^○C. -Y. Chang¹, F. A. Khaja¹, K. E. Hollar¹, K. V. Rao¹, S. Munnanqi¹, Y. Chen¹, M. Okazaki¹, Y. -C. Huang¹, X. Li¹, H. Chung¹, O. Chan¹, C. Lazik¹, M. Jin¹, H. Zhou¹, A. Mayur¹, R. Hung¹, N. Kim¹ (1.Applied Materials, Inc (USA))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:50 PM - 3:10 PM |PDF Download

763 results (261 - 270)

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