2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (631 - 640)

[PS-7-10] Controlling Circular Polarized Localized Surface Plasmon Resonance in Nanorod Based Metasurface

^○H. -T. Lin¹, C. -Y. Chang¹, P. -J. Cheng¹, M. -S. Lai^1,2, Y. -Y. Hsu^1,2, S. -W. Chang^1,2, P. -K. Wei¹, M. -H. Shih^1,2,3 (1.RCAS, Academia Sinica (Taiwan), 2.National Chiao Tung Univ. (Taiwan), 3.National Sun Yat-sen Univ. (Taiwan))

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[PS-7-11] The Resonant Phenomenon in the PL Spectra Measured in the Tensile-Strained Ge Microbridges

^○P. Zhou¹, X. Xu¹, Y. Kanda¹, S. Matsushita¹, K. Sawano¹, T. Maruizumi¹ (1.Tokyo City Univ. (Japan))

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[PS-8-01] High-Quality InSb Nanostructures Grown by Molecular-Beam Epitaxy

^○D. Pan¹, X. Yu¹, J. Zhao¹ (1.Ins. of Semiconductors, Chinese Academy of Sciences (China))

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[PS-8-02] Magnetic Domain Characterizations of MnAs Nanoclusters on Si (111) Substrate

^○M. Iida¹, R. Horiguchi¹, K. Morita¹, S. Hara¹ (1.Hokkaido Univ. (Japan))

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[PS-8-03] Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator

^○H. Gao¹, R. Aoki¹, M. Miyao¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

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[PS-8-04] In situ investigation of self-catalyzed purity Copper nanowire growth through seed-mediated synthesis

^○T. -Y. Lin¹, Y. -L. Chen¹, C. -W. Huang¹, C. -F. Chang¹, C. -H. Chiu¹, G. -M. Huang¹, Y. -C. Lo¹, W. -W. Wu¹ (1.National Chiao Tung Univ. (Taiwan))

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[PS-8-05] Self-catalyst growth of InAs and InAs/GaSb Heterostructure Nanowires on Si substrate by MOCVD

^○R. K. Kakkerla¹, H. W. Yu¹, D. Anandan¹, C. J. Hsiao², S. K. Singh¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Cheng Kung Univ. (Taiwan))

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[PS-8-06] Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy

^○Y. Kobayashi¹, T. Kimura¹, H. Nakazawa¹, H. Okamoto¹, M. Hiroki², K. Kumakura² (1.Hirosaki Univ. (Japan), 2.NTT Basic Res. Lab. (Japan))

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[PS-8-07] Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE

^○T. Yamaguchi¹, T. Sasaki², M. Takahasi², T. Araki³, T. Onuma¹, T. Honda¹, Y. Nanishi³ (1.Kogakuin Univ. (Japan), 2.QST (Japan), 3.Ritsumeikan Univ. (Japan))

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[PS-8-08] Epitaxial Growth of Non-polar ZnS on Sapphire Substrate by Mist Chemical Vapor Deposition

^○K. Okita¹, T. Goto¹, Y. Tanaka¹, M. Takenouchi¹, Z. Yatabe², Y. Nakamura^1,3 (1.Kumamoto Univ. GSST (Japan), 2.Kumamoto Univ. POIE (Japan), 3.Phoenics (Japan))

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763 results (631 - 640)