The Japan Society of Applied Physics

14:30 〜 14:45

[A-1-02] Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions

S. Sato1, R. Nakane2,1, T. Hada1, M. Ichihara1, M. Tanaka1,3 (1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.A-1-02