Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions

S. Sato

doi:https://doi.org/10.7567/SSDM.2018.A-1-02

2:30 PM - 2:45 PM

[A-1-02] Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions

^○S. Sato¹, R. Nakane^2,1, T. Hada¹, M. Ichihara¹, M. Tanaka^1,3 (1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.A-1-02

2018 International Conference on Solid State Devices and Materials

[A-1-02] Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions