2:30 PM - 2:45 PM
[A-1-02] Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions
○S. Sato1, R. Nakane2,1, T. Hada1, M. Ichihara1, M. Tanaka1,3
(1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))
https://doi.org/10.7567/SSDM.2018.A-1-02