Spin Seebeck voltage enhancement by IrMn and Mn insertion at the interface between YIG and nonmagnetic layer

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

15:45 〜 16:00

^○F. Nakata¹, T. Niimura¹, Y. Kurokawa¹, H. Yuasa^1,2 (1.Kyushu Univ. (Japan), 2.JST PRESTO (Japan))