2:45 PM - 3:00 PM

[B-1-03] Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices

^○A. Tsurumaki-Fukuchi¹, M. Arita¹, Y. Takahashi¹ (1.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.B-1-03