Study on interface dipole layer strength change by temperature in high-k/SiO2 and high-k/high-k systems and its possible origin

1:30 PM - 1:45 PM

[B-5-01] Study on interface dipole layer strength change by temperature in high-k/SiO₂ and high-k/high-k systems and its possible origin

^○T. Hamaguchi¹, S. Nittayakasetwat¹, K. Kita¹ (1.The University of Tokyo (Japan))