13:30 〜 13:45

[B-5-01] Study on interface dipole layer strength change by temperature in high-k/SiO₂ and high-k/high-k systems and its possible origin

^○T. Hamaguchi¹, S. Nittayakasetwat¹, K. Kita¹ (1.The University of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.B-5-01