The Japan Society of Applied Physics

10:00 〜 10:15

[C-3-04] Novel Integration Scheme of Replacement Metal Gate Module using Pre-Metal Dielectrics with High Gap-Fill Capability and Chemical Reaction Based H2O2 Cure

T. Yamaguchi1, M. Inoue1, A. Yoshitomi1, T. Hayashi1, M. Kadoshima1, S. Kato1, S. Muranaka1, T. Maruyama1, T. Yamashita1, M. Matsuura1 (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.C-3-04