Novel Integration Scheme of Replacement Metal Gate Module using Pre-Metal Dielectrics with High Gap-Fill Capability and Chemical Reaction Based H<sub>2</sub>O<sub>2</sub> Cure

T. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2018.C-3-04

10:00 AM - 10:15 AM

[C-3-04] Novel Integration Scheme of Replacement Metal Gate Module using Pre-Metal Dielectrics with High Gap-Fill Capability and Chemical Reaction Based H₂O₂ Cure

^○T. Yamaguchi¹, M. Inoue¹, A. Yoshitomi¹, T. Hayashi¹, M. Kadoshima¹, S. Kato¹, S. Muranaka¹, T. Maruyama¹, T. Yamashita¹, M. Matsuura¹ (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.C-3-04

2018 International Conference on Solid State Devices and Materials

[C-3-04] Novel Integration Scheme of Replacement Metal Gate Module using Pre-Metal Dielectrics with High Gap-Fill Capability and Chemical Reaction Based H2O2 Cure

[C-3-04] Novel Integration Scheme of Replacement Metal Gate Module using Pre-Metal Dielectrics with High Gap-Fill Capability and Chemical Reaction Based H₂O₂ Cure