11:00 〜 11:15

[C-4-02] Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators

^○M. Yamaguchi¹, T. Gotow¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.C-4-02