The Japan Society of Applied Physics

15:15 〜 15:45

[C-6-01 (Invited)] Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO2 for FeRAM Application

H.K. Yoo1, J.S. Kim1, Z. Zhu2, M.R. MacDonald3, X. Lei3, T.Y. Lee4, D. Lee4,5, S. Lee1, A. Yoon2, S.C. Chae4, J. Park4,5, D. Hemker2, J.G. Langan3, Y. Nishi6, J.K. Kim1 (1.SK Hynix Inc. (Korea), 2.Lam Res. Corp. (USA), 3.Versum Materials Inc. (USA), 4.Seoul National Univ. (Korea), 5.CNR, Inst. for Basic Sci. (Korea), 6.Stanford Univ. (USA))

https://doi.org/10.7567/SSDM.2018.C-6-01