15:15 〜 15:45
[C-6-01 (Invited)] Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO2 for FeRAM Application
○H.K. Yoo1, J.S. Kim1, Z. Zhu2, M.R. MacDonald3, X. Lei3, T.Y. Lee4, D. Lee4,5, S. Lee1, A. Yoon2, S.C. Chae4, J. Park4,5, D. Hemker2, J.G. Langan3, Y. Nishi6, J.K. Kim1
(1.SK Hynix Inc. (Korea), 2.Lam Res. Corp. (USA), 3.Versum Materials Inc. (USA), 4.Seoul National Univ. (Korea), 5.CNR, Inst. for Basic Sci. (Korea), 6.Stanford Univ. (USA))
https://doi.org/10.7567/SSDM.2018.C-6-01