The Japan Society of Applied Physics

16:00 〜 16:15

[C-6-03] Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application

S. Kabuyanagi1, S. Fujii1, K. Usuda1, M. Yamaguchi1, T. Ino1, Y. Nakasaki1, R. Takaishi1, Y. Kamimuta1, M. Saitoh1 (1.Toshiba Memory Corporation (Japan))

https://doi.org/10.7567/SSDM.2018.C-6-03