Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application

T. Onaya

doi:https://doi.org/10.7567/SSDM.2018.C-7-03

09:30 〜 09:45

[C-7-03] Impact of Top-ZrO₂ Nucleation Layer on Ferroelectricity of Hf_xZr_1−xO₂ Thin Films for Ferroelectric Field Effect Transistor Application

^○T. Onaya^1,2,3, T. Nabatame², N. Sawamoto¹, A. Ohi², N. Ikeda², T. Nagata², A. Ogura¹ (1.Meiji Univ. (Japan), 2.NIMS (Japan), 3.JSPS Research Fellow (Japan))

https://doi.org/10.7567/SSDM.2018.C-7-03

2018 International Conference on Solid State Devices and Materials

[C-7-03] Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application

[C-7-03] Impact of Top-ZrO₂ Nucleation Layer on Ferroelectricity of Hf_xZr_1−xO₂ Thin Films for Ferroelectric Field Effect Transistor Application