3:00 PM - 3:15 PM

[C-8-05] High Performance Ge pMOSFET with Nitrided Gate Dielectrics and Microwave Annealing

^○C.Y. Kao¹, S.H. Yi¹, C.W. Hsu¹, W.F. Chi¹, T.M. Li¹, K.S. Chang-Liao¹ (1.National Tsing Hua University (Taiwan))

https://doi.org/10.7567/SSDM.2018.C-8-05