2:45 PM - 3:00 PM

[D-1-03] Threshold Voltages of AlGaN/GaN Metal-Insulator-Semiconductor Devices Depending on Al_xTi_yO Gate Insulator Compositions

^○D.D. Nguyen¹, S.P. Le¹, T. Suzuki¹ (1.Japan Advanced Inst. of Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2018.D-1-03