15:30 〜 16:00

[D-2-01 (Invited)] Inversion Layer Mobility of SiC MOSFETs with Thermally Grown Oxide: Effect of Post-Oxidation Nitridation and Gate Oxide Thickness

^○M. Noguchi¹, T. Iwamatsu¹, H. Amishiro¹, H. Watanabe¹, K. Kita², N. Miura¹ (1.Mitsubishi Electric Corp. (Japan), 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.D-2-01