Characterization of SiO<sub>2</sub>/SiC interface using a Laser Terahertz Emission Microscope

T. Nishimura

doi:https://doi.org/10.7567/SSDM.2018.D-2-06

5:00 PM - 5:15 PM

[D-2-06] Characterization of SiO₂/SiC interface using a Laser Terahertz Emission Microscope

^○T. Nishimura¹, H. Nakanishi¹, I. Kawayama², M. Tonouchi², T. Hosoi³, T. Shimura³, H. Watanabe³ (1.SCREEN Holdings Co., Ltd. (Japan), 2.Inst. of Laser Eng., Osaka Univ. (Japan), 3.Graduate School of Eng., Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-2-06

2018 International Conference on Solid State Devices and Materials

[D-2-06] Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope

[D-2-06] Characterization of SiO₂/SiC interface using a Laser Terahertz Emission Microscope