The Japan Society of Applied Physics

17:00 〜 17:15

[D-2-06] Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope

T. Nishimura1, H. Nakanishi1, I. Kawayama2, M. Tonouchi2, T. Hosoi3, T. Shimura3, H. Watanabe3 (1.SCREEN Holdings Co., Ltd. (Japan), 2.Inst. of Laser Eng., Osaka Univ. (Japan), 3.Graduate School of Eng., Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-2-06